- Fabrication :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Filtres appliqués :
2 des produits
IMAGE | PARTIE NO. | PRIX | QUANTITÉ | STOCK | FABRICATION | LA DESCRIPTION | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | |
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GET QUOTE |
70,360
Expédié aujourd`hui + livraison gratuite pour la nuit
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ON Semiconductor | DIODE GEN PURP 600V 40A TO220F | Obsolete | Tube | Through Hole | TO-220-2 Full Pack | TO-220F-2L | Standard | 40A | 2.1V @ 40A | 20µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 110ns | -65°C ~ 150°C | |||
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34,840
Expédié aujourd`hui + livraison gratuite pour la nuit
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Infineon Technologies | IGBT 650V 40A TO247-3 | Active | - | Through Hole | TO-247-3 | PG-TO247-3-AL | Standard | 42A (DC) | 2.1V @ 40A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 76ns | -40°C ~ 175°C |