5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
SE30AFDHM3/6A
Per Unit
$0.06
RFQ
55,960
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Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1.4A DO221AC Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-221AC, SMA Flat Leads DO-221AC Standard 1.4A (DC) 910mV @ 1.5A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 19pF @ 4V, 1MHz
SE30AFB-M3/6A
Per Unit
$0.05
RFQ
39,820
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1.4A DO221AC Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-221AC, SMA Flat Leads DO-221AC Standard 1.4A (DC) 910mV @ 1.5A 10µA @ 100V 100V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 19pF @ 4V, 1MHz
SE30PAJ-M3/I
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RFQ
46,320
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Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1.4A DO221AC Automotive, AEC-Q101 Active Digi-Reel® Surface Mount DO-221AC, SMA Flat Leads DO-221AC Standard 1.4A (DC) 910mV @ 1.5A 10µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 19pF @ 4V, 1MHz
SE30PAJ-M3/I
Per Unit
$0.22
RFQ
53,760
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Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1.4A DO221AC Automotive, AEC-Q101 Active Cut Tape (CT) Surface Mount DO-221AC, SMA Flat Leads DO-221AC Standard 1.4A (DC) 910mV @ 1.5A 10µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 19pF @ 4V, 1MHz
SE30PAJ-M3/I
Per Unit
$0.06
RFQ
28,360
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1.4A DO221AC Automotive, AEC-Q101 Active Tape & Reel (TR) Surface Mount DO-221AC, SMA Flat Leads DO-221AC Standard 1.4A (DC) 910mV @ 1.5A 10µA @ 600V 600V Standard Recovery >500ns, > 200mA (Io) 1.5µs -55°C ~ 175°C 19pF @ 4V, 1MHz
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