- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Capacitance @ Vr, F :
- Filtres appliqués :
5 des produits
| IMAGE | PARTIE NO. | PRIX | QUANTITÉ | STOCK | FABRICATION | LA DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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48,400
Expédié aujourd`hui + livraison gratuite pour la nuit
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1A D5A | Military, MIL-PRF-19500/585 | Active | Bulk | Surface Mount | SQ-MELF, A | D-5A | Standard | 1A | 1.75V @ 1A | 1µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | - | |||
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27,580
Expédié aujourd`hui + livraison gratuite pour la nuit
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1A A-MELF | - | Active | Bulk | Surface Mount | SQ-MELF, A | A-MELF | Standard | 1A | 1.75V @ 1A | 1µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
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45,980
Expédié aujourd`hui + livraison gratuite pour la nuit
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1A AXIAL | - | Active | Bulk | Through Hole | A, Axial | - | Standard | 1A | 1.75V @ 1A | 1µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz | |||
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GET QUOTE |
13,960
Expédié aujourd`hui + livraison gratuite pour la nuit
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1A D5A | Military, MIL-PRF-19500/585 | Discontinued at Digi-Key | Bulk | Through Hole | A, Axial | A-PAK | Standard | 1A | 1.75V @ 1A | 1µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | - | ||
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67,780
Expédié aujourd`hui + livraison gratuite pour la nuit
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1A D5A | Military, MIL-PRF-19500/585 | Active | Bulk | Surface Mount | SQ-MELF, A | D-5A | Standard | 1A | 1.75V @ 1A | 1µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | 10pF @ 10V, 1MHz |
