- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Filtres appliqués :
9 des produits
| IMAGE | PARTIE NO. | PRIX | QUANTITÉ | STOCK | FABRICATION | LA DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
57,600
Expédié aujourd`hui + livraison gratuite pour la nuit
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 9.4A (DC) | 1.6V @ 10A | 20µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 884pF @ 1V, 1MHz | |||
|
|
73,260
Expédié aujourd`hui + livraison gratuite pour la nuit
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 4.3A TO276 | - | Active | Tube | Surface Mount | TO-276AA | TO-276 | Silicon Carbide Schottky | 4.3A (DC) | 1.65V @ 5A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 274pF @ 1V, 1MHz | |||
|
|
|
67,140
Expédié aujourd`hui + livraison gratuite pour la nuit
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 9.4A (DC) | 1.34V @ 10A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 1107pF @ 1V, 1MHz | |||
|
|
|
73,980
Expédié aujourd`hui + livraison gratuite pour la nuit
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | - | Active | Tube | Through Hole | TO-276AA | TO-276 | Silicon Carbide Schottky | 1A | 1.5V @ 1A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 76pF @ 1V, 1MHz | |||
|
|
|
15,880
Expédié aujourd`hui + livraison gratuite pour la nuit
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 8A (DC) | 1.6V @ 2.5A | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 237pF @ 1V, 1MHz | |||
|
|
|
20,560
Expédié aujourd`hui + livraison gratuite pour la nuit
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 14.6A TO276 | - | Active | Tube | Surface Mount | TO-276AA | TO-276 | Silicon Carbide Schottky | 14.6A (DC) | 1.5V @ 15A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 1107pF @ 1V, 1MHz | |||
|
|
|
20,520
Expédié aujourd`hui + livraison gratuite pour la nuit
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 750mA | 1.74V @ 750mA | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 66pF @ 1V, 1MHz | |||
|
|
|
44,180
Expédié aujourd`hui + livraison gratuite pour la nuit
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 2.5A | 1.3V @ 2.5A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 274pF @ 1V, 1MHz | |||
|
|
|
78,980
Expédié aujourd`hui + livraison gratuite pour la nuit
|
GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 750mA | 1.39V @ 750mA | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 76pF @ 1V, 1MHz |
