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2 des produits
| IMAGE | PARTIE NO. | PRIX | QUANTITÉ | STOCK | FABRICATION | LA DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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60,900
Expédié aujourd`hui + livraison gratuite pour la nuit
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Microsemi Corporation | IGBT 900V 72A 417W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 72A | 900V | PT | 3.9V @ 15V, 25A | 110A | 370µJ (off) | 110nC | 13ns/55ns | 600V, 40A, 4.3 Ohm, 15V | |||
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GET QUOTE |
37,860
Expédié aujourd`hui + livraison gratuite pour la nuit
|
Microsemi Corporation | IGBT 900V 72A 417W TO247 | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 417W | TO-247 [B] | - | 72A | 900V | PT | 3.9V @ 15V, 25A | 110A | 370µJ (off) | 110nC | 13ns/55ns | 600V, 25A, 5 Ohm, 15V |
