Packaging :
Supplier Device Package :
Current - Collector Pulsed (Icm) :
Td (on/off) @ 25°C :
3 des produits
IMAGE PARTIE NO. PRIX QUANTITÉ STOCK FABRICATION LA DESCRIPTION Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) IGBT Type Vce(on) (Max) @ Vge, Ic Current - Collector Pulsed (Icm) Switching Energy Gate Charge Td (on/off) @ 25°C Test Condition
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$4.14
RFQ
41,640
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Microsemi Corporation INSULATED GATE BIPOLAR TRANSISTO - Active Bulk Standard -55°C ~ 150°C (TJ) Through Hole TO-247-3 595W T-MAX™ [B2] 134A 650V NPT 2.4V @ 15V, 70A 280A - 305nC 18ns/170ns 433V, 70A, 4.3 Ohm, 15V
APT70GR65B
Par unité
$3.85
RFQ
57,060
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Microsemi Corporation IGBT 650V 134A 595W TO-247 - Active Tube Standard -55°C ~ 150°C (TJ) Through Hole TO-247-3 595W TO-247 134A 650V NPT 2.4V @ 15V, 70A 260A 1.51mJ (on), 1.46mJ (off) 305nC 19ns/170ns 433V, 70A, 4.3 Ohm, 15V
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RFQ
38,180
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Microsemi Corporation INSULATED GATE BIPOLAR TRANSISTO Obsolete Bulk - -55°C ~ 150°C (TJ) Through Hole TO-247-3 595W T-MAX™ [B2] 134A 650V NPT 2.4V @ 15V, 70A 260A - 305nC 19ns/170ns 433V, 70A, 4.3 Ohm, 15V