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| IMAGE | PARTIE NO. | PRIX | QUANTITÉ | STOCK | FABRICATION | LA DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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48,660
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ON Semiconductor | IGBT 650V 100A TO-3PN | - | Active | Tube | Standard | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 268W | TO-3PN | 31.8ns | 100A | 650V | Trench Field Stop | 2.2V @ 15V, 50A | 150A | 1.35mJ (on), 309µJ (off) | 72.2nC | 20.8ns/62.4ns | 400V, 50A, 6 Ohm, 15V |
