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| IMAGE | PARTIE NO. | PRIX | QUANTITÉ | STOCK | FABRICATION | LA DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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Microsemi Corporation | IGBT 1200V 100A 1042W TMAX | POWER MOS 7® | Active | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | 1042W | - | 100A | 1200V | PT | 3.9V @ 15V, 75A | 300A | 1620µJ (on), 2500µJ (off) | 320nC | 20ns/163ns | 600V, 75A, 5 Ohm, 15V |
