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| IMAGE | PARTIE NO. | PRIX | QUANTITÉ | STOCK | FABRICATION | LA DESCRIPTION | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | IGBT Type | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Test Condition | |
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34,100
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Microsemi Corporation | IGBT 600V 100A 625W TO247 | POWER MOS 7® | Not For New Designs | Tube | Standard | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 625W | TO-247 [B] | - | 100A | 600V | PT | 2.7V @ 15V, 50A | 190A | 465µJ (on), 637µJ (off) | 165nC | 19ns/83ns | 400V, 50A, 5 Ohm, 15V |
